AIXTRON AG today announced that Taiwan-based High Power Opto has placed an order for one AIX 2800G4 HT MOCVD system in the second quarter of 2008. High Power Opto will receive the system in the 42x2-inch wafer configuration. It will be instalLed at the company's production facilities in Taiwan in the first quarter of 2009 and be used for volume production of ultra high brightness (UHB) gallium nitride based LEDs.

KH Huang, the chairman of HPO commented that the new MOCVD equipment is important for the company's plans. HPO was already producing commercially available UHB AlGaInP red LEDs on Aixtron's AIX 2600G3 planetary reactor system. HPO now plans to produce UHB blue-green GaN LEDs.

The new MOCVD system will form the basis of our planned transition away from buying GaN epiwafers for in-house device fabrication.

Source:DIGITIEMS